(1)








(2)N、P位于同一主族,


①




②


(3)氮化镓(GaN)作为第三代半导体材料,具有耐高温、耐高电压等特性,随着

a.

b.


c.GaN属于分子晶体
(4)某一种氮化硼晶体的晶胞结构如下图:

①氮化硼的化学式
②已知该晶胞的边长为





同类型试题

y = sin x, x∈R, y∈[–1,1],周期为2π,函数图像以 x = (π/2) + kπ 为对称轴
y = arcsin x, x∈[–1,1], y∈[–π/2,π/2]
sin x = 0 ←→ arcsin x = 0
sin x = 1/2 ←→ arcsin x = π/6
sin x = √2/2 ←→ arcsin x = π/4
sin x = 1 ←→ arcsin x = π/2


y = sin x, x∈R, y∈[–1,1],周期为2π,函数图像以 x = (π/2) + kπ 为对称轴
y = arcsin x, x∈[–1,1], y∈[–π/2,π/2]
sin x = 0 ←→ arcsin x = 0
sin x = 1/2 ←→ arcsin x = π/6
sin x = √2/2 ←→ arcsin x = π/4
sin x = 1 ←→ arcsin x = π/2

